METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon carbide semiconductor device having constant characteristics with reduced variations in forward characteristics. SOLUTION: The method for manufacturing the silicon carbide semiconductor device includes the processes of: (a) preparing a silicon carbide substrate 1; (b) forming an epitaxial layer 2 on a main surface of the silicon carbide substrate 1; (c) forming a protective film 10 on the epitaxial layer 2; (d) forming a first metal layer 6 on the other main surface of the silicon carbide substrate 1; (e) applying heat treatment to the silicon carbide substrate 1 at a predetermined temperature to form an ohmic junction between the first metal layer 6 and the other main surface of the silicon carbide substrate 1; (f) removing the protective film 10 after the process (e); (g) forming a second metal layer 5 on the epitaxial layer 2 after the process (f); and (h) applying heat treatment to the silicon carbide substrate 1 at a temperature from 400 to 600°C after the process (g) to form a Schottky junction of desired characteristics between the second metal layer 5 and the epitaxial layer 2. COPYRIGHT: (C)2009,JPO&INPIT