A PLASMA ETCHING RESIDUES CLEANING COMPOSITION

摘要

A plasma etching residues cleaning composition. The composition comprises: dimethylsulfoxide; polyol monoalkyl ethers; water; fluorides; polyamino organoamine; amino acid; tertiary amine.It has the better cleaning capability, larger operation window and better prospect in microelectronics industry field such as semiconductor wafer cleaning. It can remove residues of metal and via and pad wafer in plasma etching process effectively.It has lower corrosion rate to nonmetallic materials( SiO2, PETEOS, Si and low -medium material) and partial metallic materials(Ti, Al and Cu).Its cleaning measure includes batch soaking measure, batch rotary spray measure and singlechip rotary measure.