发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To planarize surfaces of fine bumps formed on a substrate inexpensively and at high speed, and to easily and reliably connect bumps with each other without causing inconvenience such as dishing. <P>SOLUTION: A plurality of first bumps are formed on the surface of a first substrate, and a first insulating film is formed between the plurality of the first bumps. Planarization is performed by cutting using a byte so that the surfaces of the plurality of first bumps and the surface of the first insulating film become continuously planarized. A plurality of second bumps are formed on the surface of a second substrate, and a second insulating film is formed between the plurality of second bumps. The planarization is performed by cutting using the byte so that the surfaces of the plurality of second bumps and the surface of the second insulating film become continuously planarized. Then, the plurality of first bumps and the plurality of second bumps, and the first insulating film and the second insulating film are opposed to each other and connected with each other. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009094545(A) 申请公布日期 2009.04.30
申请号 JP20090022023 申请日期 2009.02.02
申请人 FUJITSU LTD 发明人 MIZUKOSHI MASATAKA;ISHIZUKI YOSHIKATSU;NAKAGAWA KANAE;OKAMOTO KEISHIRO;TESHIROGI KAZUO;SAKAI TAIJI
分类号 H01L25/065;H01L21/48;H01L21/60;H01L25/07;H01L25/18 主分类号 H01L25/065
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