| 摘要 |
PROBLEM TO BE SOLVED: To provide a gallium nitride substrate capable of reducing an abnormal growth of a compound semiconductor at a boundary part of a defect formed by a facet plane growth and a region formed by a C plane growth and to provide a manufacturing method of the gallium nitride substrate. SOLUTION: The gallium nitride substrate 10 is provided with a defective part 121 formed by the facet plane growth of a gallium nitride single crystal and having a polarity opposite to an ambient polarity, a C plane grown part 110 formed by the C plane growth, a defective upper end 124 exposed outside at an end part of a grown plane side of the defective part 121, a vertical plane 126 formed along a normal line direction of the surface of the C plane grown part 110 toward the C plane grown part 110 from the defective upper end 124 and a curved plane part 122 formed between the vertical plane 126 and the C plane grown part 110. COPYRIGHT: (C)2009,JPO&INPIT
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