POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a positive resist composition improved in pattern collapse performance and focus margin even in the formation of a fine pattern of ≤100 nm and having good exposure latitude, and a pattern forming method using the same.

SOLUTION: The positive resist composition comprises: (A) a resin which has an acid-decomposable repeating unit having a specific tertiary ester structure and whose solubility in an alkali developer increases by the action of an acid; (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation; and (C) a compound capable of generating a compound having a proton accepting functional group of a specific structure upon irradiation with actinic rays or radiation. The pattern forming method using the same is also provided.

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