| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device having an isolated charge accumulating layer, which suppresses the collapse of a gate electrode when a gate insulating film is formed under the center of the gate electrode. SOLUTION: The manufacturing method for the semiconductor device includes a step of forming a first insulating film 22 and the gate electrode 24 on a semiconductor substrate 10, a step of forming the gate insulating film 22 under the center of the gate electrode 24 by eliminating the first insulating film 22 from an opening 46, a step of eliminating the first insulating film 22 formed under the gate electrode 24 by hydrofluoric acid based wet etching to form undercut portions under both ends of the gate electrode 24, and a step of forming a tunnel insulating film 12, the charge accumulating layer 14 made of a polysilicon film, and a top insulating film 16 in the undercut portion from which the first insulating film 22 is eliminated. COPYRIGHT: (C)2009,JPO&INPIT |
