发明名称 |
NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A non-volatile semiconductor storage device has a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series. Each of the memory strings includes: a first columnar semiconductor layer extending in a direction perpendicular to a substrate; a charge accumulation layer formed on the first columnar semiconductor layer via a first air gap and accumulating charges; a block insulation layer contacting the charge accumulation layer; and a plurality of first conductive layers contacting the block insulation layer.
|
申请公布号 |
US2009108333(A1) |
申请公布日期 |
2009.04.30 |
申请号 |
US20080260589 |
申请日期 |
2008.10.29 |
申请人 |
KABUSHIKI KASIHA TOSHIBA |
发明人 |
KITO MASARU;KATSUMATA RYOTA;KIDOH MASARU;TANAKA HIROYASU;FUKUZUMI YOSHIAKI;AOCHI HIDEAKI;MATSUOKA YASUYUKI |
分类号 |
H01L29/788;H01L21/3205 |
主分类号 |
H01L29/788 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|