SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor substrate capable of preventing the deterioration of the carrier mobility resulting from the surface unevenness on the surface thereof by controlling the direction and the width of an atomic level step/terrace on the semiconductor substrate surface, and to provide a semiconductor device. SOLUTION: A plurality of terraces are formed in a stepped shape according to atomic step substantially in the same direction on the semiconductor substrate surface. Further, a MOS transistor is formed using this semiconductor substrate so that there is no step in the carrier running direction (source-drain direction). COPYRIGHT: (C)2009,JPO&INPIT