Dual work function semiconductor device and method for manufacturing the same

摘要

A simplified method of dual work function device manufacturing starting from a single metal electrode is described as well as the device itself.
A single-metal-single-dielectric (SMSD) CMOS integration scheme is described, where a single dielectric stack comprising a gate dielectric layer (1) and a dielectric capping layer (2) and one metal layer (3) overlying the dielectric stack are first deposited, forming a metal- dielectric interface. Upon forming the dielectric stack and the metal layer, at least part of the dielectric capping layer is selectively modified by adding work function tuning elements, the part being adjacent to the metal-dielectric interface.