Phase change memory cell design with adjusted seam location

摘要

A memory cell comprises a lower electrode, a phase change feature, a spacer feature, and a dielectric layer. The lower electrode comprises a first surface region as well as a second surface region that is raised in relation to the first surface region. The phase change feature is disposed on the second surface region of the lower electrode and has one or more sidewalls. The spacer feature is also disposed on the second surface region of the lower electrode and against the one or more sidewalls of the phase change feature. The dielectric layer is formed at least partially on top of the first surface region of the lower electrode and abutting the spacer feature.