| 摘要 |
A method for manufacturing a photoelectric transducer, comprising: forming a first electrode on a substrate; forming a first conductivity-type semiconductor layer on the first electrode; forming an I type semiconductor layer on the first conductivity-type semiconductor layer; forming on the I type semiconductor layer a second conductivity-type semiconductor layer that is different from the first conductivity-type; and forming a second electrode on the second conductivity-type semiconductor layer, wherein the forming of the I type semiconductor layer includes: forming a precursor film of the I type semiconductor layer on the first conductivity-type semiconductor layer by arranging droplets containing a silicon compound in an island shape; and converting the precursor film into the I type semiconductor layer by carrying out heat treatment or photoirradiation treatment to the precursor film.
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