TRANSPARENT THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

摘要

A transparent thin film transistor and a manufacturing method thereof are provided to prevent the deterioration of the element due to a high voltage and to reduce power consumption by thickening the width of a channel of a transistor. An active layer(23) made of a semiconductor material is formed on a substrate(21). A source and drain electrode(22) is made of metal compound to contact both sides of the active layer. A gate insulation layer(24) is formed on the active layer. A gate electrode(25A) is formed on the gate insulating layer. The active layer, the gate electrode, the gate insulating layer, and the source and drain electrode are made of the transparent material which the light penetrates into.