发明名称 Process of forming a semiconductor assembly having a contact structure and contact liner
摘要 A contact structure and a method of forming thereof for semiconductor devices or assemblies are described. The method provides process steps to create a contact structure encompassed by a sacrificial contact medium having an opening therein that is lined with a conductive spacer liner that effectively prevents the contact structure from being damaged during removal of the surrounding sacrificial contact medium material. The sacrificial contact medium is then replaced with a non-boron doped dielectric material.
申请公布号 US7524756(B2) 申请公布日期 2009.04.28
申请号 US20060495438 申请日期 2006.07.28
申请人 MICRON TECHNOLOGY, INC. 发明人 HUGLIN GRANT S.;BURKE ROBERT J.;TANG SANH D.
分类号 H01L21/4763 主分类号 H01L21/4763
代理机构 代理人
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