发明名称 LASER BEAM MACHINING METHOD AND SEMICONDUCTOR CHIP
摘要 <p>An object to be processed 1 comprising a substrate 4 and a plurality of functional devices 15 formed on a front face 3 of the substrate 4 is irradiated with laser light L while locating a converging point P within the substrate 4, so as to form at least one row of a divided modified region 72, at least one row of a quality modified region 71 positioned between the divided modified region 72 and the front face 3 of the substrate 4, and at least one row of an HC modified region 73 positioned between the divided modified region 72 and a rear face 21 of the substrate 4 for one line to cut 5. Here, in a direction along the line to cut, a forming density of the divided modified region 72 is made lower than that of the quality modified region 71 and that of the HC modified region 73.</p>
申请公布号 EP1983557(A4) 申请公布日期 2009.04.22
申请号 EP20060843303 申请日期 2006.12.26
申请人 HAMAMATSU PHOTONICS K.K. 发明人 SAKAMOTO, TAKESHI;MURAMATSU, KENICHI
分类号 H01L21/301;B23K26/38;B23K26/40;B23K101/40;B28D5/00 主分类号 H01L21/301
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