| 摘要 |
A non-volatile memory array segment includes an odd-select transistor having a drain coupled to an odd-source line and an even-select transistor having a drain coupled to an even-source line. Two segment-select transistors have drains coupled to the sources of different ones of the odd and even source lines, sources coupled to ground, and gates coupled to a segment-select line. A plurality of odd non-volatile memory transistors each has a drain coupled to a common drain line, a source coupled to the odd-source line, a floating gate, and a control gate. A plurality of even non-volatile memory transistors, each has a drain coupled to the common drain line, a source coupled to the even-source line, a floating gate, and a control gate. The control gate of each even non-volatile memory transistor is coupled to the control gate of a different one of the odd non-volatile memory transistors.
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