| 发明名称 |
Electric device comprising an LDMOS transistor |
| 摘要 |
The LDMOS transistor (99) of the invention is provided with a stepped shield structure (50) and/or with a first (25) and a second (26) drain extension region having a higher dopant concentration than the second drain extension region, and being covered by the shield.
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| 申请公布号 |
US7521768(B2) |
申请公布日期 |
2009.04.21 |
| 申请号 |
US20060569171 |
申请日期 |
2006.02.22 |
| 申请人 |
NXP B.V. |
发明人 |
THEEUWEN STEPHAN JO CECILE HENRI;VAN RIJS FREERK;HAMMES PETRA CHRISTINA ANNA;POUWEL IVO BERNHARD;JOS HENDRIKUS FERDINAND FRANCISCUS |
| 分类号 |
H01L27/088;H01L21/336;H01L29/06;H01L29/08;H01L29/40;H01L29/78 |
主分类号 |
H01L27/088 |
| 代理机构 |
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