METHOD FOR MEASUREMENT OF PHOTOFERROMAGNETIC EFFECT IN MAGNETIC SEMICONDUCTORS

摘要

FIELD: physics, semiconductors. ^ SUBSTANCE: invention is related to the field of semiconductor equipment and electronics. Method for measurement of photoferromagnetic effect in magnetic semiconductors consists in measurement of electromotive force that occurs in the secondary winding of transformer, which is wound on adjacent section of core from magnetic semiconductor in the form of doubled ring. The primary winding of transformer represents two coils wound on nonadjacent sides of doubled ring symmetrically relative to plane of symmetry that separates core in two rings. As a result of unbalance, in sinusoidal signals of magnetic flows directed and same in value that penetrate the secondary winding that are serially and antiphase-connected to outlet of generator, due to illumination of strictly half of core on one side from mentioned plane of symmetry, in this winding electromotive force occurs that is proportional to variation of magnetic permeability under light effect. ^ EFFECT: provision of possibility to perform measurements of photoferromagnetic effect amplitude in more sensitive scales of metering instruments.