| 摘要 |
A magnetic memory cell (10) includes first and second magnetoresistive devices (12, 14) connected in series. The first and second magnetoresistive devices (12, 14) have sense layers (18, 24) with different coercivities (L1, L2). Magnetic Random Access Memory (MRAM) devices (812) may include arrays of these memory cells (10) . <IMAGE> |
