METHOD OF TREATING SUBSTRATE, PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE TREATING APARATUS AND RECORDING MEDIUM

摘要

A method of treating a substrate, comprising the first step of setting a substrate with metal layer to be treated to a first temperature so that a treating gas containing an organic compound is adsorbed on the metal layer to thereby form a metal complex, and the second step of heating the substrate at a second temperature higher than the first temperature to thereby sublime the metal complex.