发明名称 |
Method of manufacturing gate sidewalls that avoids recessing |
摘要 |
A method of manufacturing a semiconductor device comprising removing a first oxide layer deposited over a semiconductor substrate, thereby exposing source and drain regions of the substrate. The first oxide layer is configured as an etch-stop for forming silicon nitride sidewall spacers of a gate structure located adjacent to the source and drain regions. The method further comprises depositing a second oxide layer selectively on the exposed source and drain regions and then removing lateral segments of the silicon nitride sidewall spacers.
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申请公布号 |
US7514331(B2) |
申请公布日期 |
2009.04.07 |
申请号 |
US20060422952 |
申请日期 |
2006.06.08 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
YOON JONG SHIK;CHATTERJEE AMITAVA;BU HAOWEN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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