发明名称 Piezoelectric MEMS integration with GaN technology
摘要 A process for fabricating a combined micro electromechanical/gallium nitride structure. The micro electromechanical structure comprises a piezoelectric device, such as a piezoelectric switch or a bulk acoustic wave device. According to the process, high Q compact bulk acoustic wave resonators can be built. The process is applicable to technologies such as tunable planar filter technology, amplifier technology and high speed analog-to-digital converters.
申请公布号 US7514759(B1) 申请公布日期 2009.04.07
申请号 US20050104395 申请日期 2005.04.11
申请人 HRL LABORATORIES, LLC 发明人 MEHTA SARABJIT;GRIDER DAVID E.;WONG WAH S.
分类号 H01L29/84;H01L21/00 主分类号 H01L29/84
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