III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A III-nitride semiconductor light emitting device is provided to suppress the generation of the unbalanced of the electric current density due to the instability of the electrical contact and leakage current. The groove(91) is formed in the substrate(10). A plurality of III nitride semiconductor layer is formed on the substrate. A plurality of III nitride semiconductor layers comprises the active layer(40) and III nitride semiconductor layer(30). The opening is formed in the groove along a plurality of III nitride semiconductor layers. The first electrode(81) is electrically contacted with the III nitride semiconductor layer through the groove. The second electrode(82) is electrically contacted with the III nitride semiconductor layer after the first electrode.