Semiconductor device,申请号US20050585828-传众专利搜索

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发明名称	Semiconductor device
摘要	The present invention relates to a semiconductor device comprising a semiconductor substrate (1), a gate insulator formed on this substrate, such as a gate oxide film (2), and a gate electrode (3) formed on the insulator. The gate electrode (3) has a metallic compound film (3a). This metallic compound film (3a) is formed by CVD using a material containing a metal carbonyl, e.g., W(CO)6 gas, and at least one of a Si-containing gas and a N-containing gas. The work function of the metallic compound film (3a) thus formed is controllable by the Si and/or N content of the film.
申请公布号	US2009085130(A1)	申请公布日期	2009.04.02
申请号	US20050585828	申请日期	2005.01.28
申请人	SUZUKI KENJI;CHUNG GISHI;OKUBO KAZUYA	发明人	SUZUKI KENJI;CHUNG GISHI;OKUBO KAZUYA
分类号	H01L21/285;H01L29/78;C23C16/42;H01L21/28;H01L29/423;H01L29/49	主分类号	H01L21/285
代理机构		代理人
主权项
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