发明名称 |
THIN FILM METAL OXIDE BEARING SEMICONDUCTOR MATERIAL FOR SINGLE JUNCTION SOLAR CELL DEVICES |
摘要 |
<p>A structure for a single junction solar cell. The structure includes a substrate member having a surface region. The structure includes a first electrode structure overlying the surface region of the substrate member. A P absorber layer is formed overlying the first electrode structure. In a specific embodiment, the P absorber layer has a P- type impurity characteristics and a first optical absorption coefficient greater than 104 cm -1 in a wavelength range comprising 400 nm to 800 nm. An N+ layer is provided overlying the P absorber layer and an interface region formed within a vicinity of the P layer and the N+ layer. The structure also includes a high resistivity buffer layer overlying the N+ layer and a second electrode structure overlying the buffer layer.</p> |
申请公布号 |
WO2009042927(A1) |
申请公布日期 |
2009.04.02 |
申请号 |
WO2008US77965 |
申请日期 |
2008.09.26 |
申请人 |
STION CORPORATION;LEE, HOWARD W.H. |
发明人 |
LEE, HOWARD W.H. |
分类号 |
H01L31/109 |
主分类号 |
H01L31/109 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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