发明名称 PROCESS FOR SELECTIVE AREA DEPOSITION OF INORGANIC MATERIALS
摘要 <p>An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organic compound or polymer; and patterning the deposition inhibitor material either after step (b) or simultaneously with applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. An inorganic thin film material is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.</p>
申请公布号 WO2009042046(A1) 申请公布日期 2009.04.02
申请号 WO2008US10759 申请日期 2008.09.16
申请人 EASTMAN KODAK COMPANY;YANG, CHENG;IRVING, LYN, MARIE;LEVY, DAVID, HOWARD;COWDERY-CORVAN, PETER, JEROME;FREEMAN, DIANE, CAROL 发明人 YANG, CHENG;IRVING, LYN, MARIE;LEVY, DAVID, HOWARD;COWDERY-CORVAN, PETER, JEROME;FREEMAN, DIANE, CAROL
分类号 C23C16/455;C23C16/04 主分类号 C23C16/455
代理机构 代理人
主权项
地址