NEGATIVE RESIST COMPOSITION AND RESIST PATTERN-FORMING METHOD USING THE SAME

摘要

Disclosed is a negative resist composition which enables to improve performance of microphotofabrication using far ultraviolet light, particularly an ArF excimer laser having a wavelength of 193 nm. Specifically disclosed is a negative resist composition which hardly suffers from pattern collapses during fine pattern formation, while exhibiting good resolution. The negative resist composition is characterized by containing an alkali-soluble resin (A), a compound (B) including a low-molecular-weight compound having an oxethane structure having a molecular weight of not more than 2000, and a cationic photopolymerization initiator (C). Also specifically disclosed is a resist pattern-forming method using such a negative resist composition.