| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a surface emitting diode whose output light intensity is hardly affected by an in-use temperature environment. <P>SOLUTION: An active layer 22 has a quantum well structure including a plurality of quantum well layers 24, 26, and 28 having double heterostructures and differing in well width from one another and the distance K between a multilayered reflective layer 14 and an output surface 34 constituting a resonator is ≥3 μm, so the resonator has resonance modes of a plurality of resonance frequencies and then output light L including a plurality of peaks (p) is obtained and has its intensity decrease suppressed along the optical axis even if light generated by the active layer 22 shifts in wavelength owing to ambient temperature variation, thereby obtaining the surface emitting diode 10 whose output light intensity is hardly affected by the in-use temperature environment. Further, the active layer 22 has the plurality of quantum well layers having the double heterostructures, the light emission efficiency of the active layer 22 is enhanced. <P>COPYRIGHT: (C)2009,JPO&INPIT |
