发明名称 High voltage gate driver using a low voltage multi-level current pulse translator
摘要 A multi-level current pulse generator for driving the gates of a CMOS pair implemented using a low voltage process including a multi-level pulse translator, a current amplifier circuit, and a clamp circuit. The multi-level pulse translator generates a multi-level current pulse on at least one pulse node, each current pulse having a first large current pulse with short duration followed by at least one smaller current pulse of longer duration and operative to switch the CMOS pair with reduced average power dissipation. The current amplifier circuit amplifies the current pulses provided to the gates of the CMOS pair. The clamp circuit clamps gate voltage of the CMOS pair to prevent breakdown. In a tri-level case, a first current pulse charges and discharges gate capacitance, a second current pulse stabilizes gate voltage, and a third current pulse provides a holding current level.
申请公布号 US7088151(B1) 申请公布日期 2006.08.08
申请号 US20040828610 申请日期 2004.04.21
申请人 INTERSIL AMERICAS INC. 发明人 DEQUINA NOEL B.;ISHAM ROBERT H.;SFERRAZZA PAUL K.;PRESLAR DONALD R.
分类号 H03B1/00 主分类号 H03B1/00
代理机构 代理人
主权项
地址