| 摘要 |
The present invention provides a semiconductor device that includes a plurality of transistor cells and makes it possible to achieve higher degree of integration and lower cost of an integrated semiconductor circuit device as the first object, and provide an integrated semiconductor circuit device of high density integration and compact construction at a low cost. The semiconductor device includes a plurality of transistor cells each comprising the first layer, the base layer and the second layer formed in this order on the substrate, one of the first layer and the second layer serving as the collector layer and the other serving as the emitter layer, and the first electrode connected to the first layer of each of the transistor cells is formed in the etching trench formed in the first layer, wherein the etching trench has normal mesa surface on the side thereof in the longitudinal direction, and the first electrodes of the plurality of transistor cells are connected each other through a collective wiring that is provided so as to cross the normal mesa surfaces of the trenches of the plurality of transistor cells.
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