发明名称 MEMORY DEVICE INCLUDING RESISTANCE-CHANGING FUNCTION BODY
摘要 A resistance-changing function body includes an object made of a first substance and interposed between a first electrode and a second electrode, and a plurality of particles made of a second substance and arranged within the object so that an electrical resistance between the first electrode and the second electrode is changed before and after application of a specified voltage to between the first electrode and the second electrode. The first substance makes an electrical barrier against the second substance. With this constitution, by applying a specified voltage to between the first electrode and the second electrode, the electrical resistance can be changed depending on a state of the particles made of the second substance. Also, by virtue of a simple structure, a resistance-changing function body of small size is provided with low cost.
申请公布号 US2009085025(A1) 申请公布日期 2009.04.02
申请号 US20080271837 申请日期 2008.11.14
申请人 ARAI NOBUTOSHI;IWATA HIROSHI;KAKIMOTO SEIZO 发明人 ARAI NOBUTOSHI;IWATA HIROSHI;KAKIMOTO SEIZO
分类号 H01L45/00;H01L21/265;H01L27/24;H01L29/861 主分类号 H01L45/00
代理机构 代理人
主权项
地址