METHOD FOR CONTROLLING FILM FORMING APPARATUS, FILM FORMING METHOD, FILM FORMING APPARATUS, ORGANIC EL ELECTRONIC DEVICE AND STORAGE MEDIUM HAVING PROGRAM FOR CONTROLLING FILM FORMING APPARATUS STORED THEREIN

摘要

[PROBLEMS] To quickly insert a material having a low work function into the vicinity of an interface between an organic layer and a cathode. [MEANS FOR SOLVING PROBLEMS] A sputtering apparatus (Sp) is provided with a target material (305) made of silver (Ag); a dispenser (Ds), which is arranged outside a processing container for heating and evaporating cesium (Cs) having a work function smaller than that of silver (Ag); a first gas supply tube (345), which is communicated with the dispenser (Ds) for transferring vapor of the evaporated cesium (Cs) into the processing container with argon gas as a carrier gas; and a high frequency power supply (360) for supplying high frequency power into the processing container. A controller (50) controls the rate of cesium (Cs) to be mixed in a metal electrode (30) being formed, by controlling the temperature of the dispenser (Ds), at the time of generating plasma by exciting the argon gas by using energy of the high frequency power to generate plasma and depositing silver (Ag) atoms sputtered from a target material (305) as the metal electrode (30) by the generated plasma.