| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin film photoelectric conversion device which improves photoelectrically converting efficiency. <P>SOLUTION: The thin film photoelectric conversion device includes a transparent electrode layer, one or more photoelectric conversion units and a rear electrode layer which are successively disposed from a light incidence side. In the thin film photoelectric conversion device, the photoelectric conversion unit is one in which a p-type semiconductor layer, a photoelectric conversion layer of a substantially intrinsic semiconductor, and an n-type semiconductor layer are disposed in this order from a light incidence direction. The transparent electrode layer contains Zn, Mg, O and a doping impurity, and the transparent electrode layer contacts with the p-type semiconductor layer contained in one of the photoelectric conversion units at an interface. Thus, the problem is solved. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
