发明名称 VACUUM SUCTION STAGE AND SEMICONDUCTOR MANUFACTURING METHOD USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a vacuum suction stage avoiding problems due to the remaining of water, steam and chemical, which are used in a wet process, on the wafer rear face and the surface of the vacuum suction stage, and to provide a semiconductor manufacturing method that uses the stage. SOLUTION: The vacuum suction stage is provided with a wafer surface that should face the wafer rear face, a gas port which is formed on the wafer-facing face and sends out inert gas and a suction port which is formed on the wafer face and sucks air. The suction port is formed so as to surround the gas port, closer to an edge side of the wafer face than to the gas port. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009070996(A) 申请公布日期 2009.04.02
申请号 JP20070237076 申请日期 2007.09.12
申请人 MITSUBISHI ELECTRIC CORP 发明人 SAKAMOTO SHOICHI
分类号 H01L21/683 主分类号 H01L21/683
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