摘要 |
A matrix microelectronic device comprising: a plurality of cells laid out according to a matrix, respectively comprising at least one current source formed by at least one current source transistor (T1), a source electrode of said transistor is connected to a source biasing conductor line, a gate electrode of the transistor is connected to a gate biasing conductor line among a plurality of conductor gate biasing lines, wherein the device further comprises means for biasing the conductor gate biasing lines comprising: at least one first connection line, means for generating current or voltage, positioned on at least one end of said first connection line, and provided to generate an evolution of potentials along said first connection line.
|