| 摘要 |
<p>A recess gate manufacturing method of a semiconductor device is provided to minimize the leakage current of the semiconductor device by removing cuspidal points between an element isolation film and an active area. A recess gate manufacturing method of a semiconductor device includes a step for forming a trench(22); a step for forming an element isolation film(23), a step for forming hard mask patterns; a step for forming a recess region(100). The trench is formed on a silicon substrate(21) in order to define the active area. The element isolation film is formed in order to fill up the trench. Each of hard mask patterns is comprised of the oxide film pattern(24A) and an amorphous carbon layer pattern which are successively laminated. The hard mask patterns are formed to partly expose the active area. The recess region is formed in the active area using the hard mask patterns as an etching mask. The recess region has dual profiles(27, 28).</p> |
