发明名称 BLANK MASK AND PHOTOMASK WHICH HAS DEPOSITION LAYER ON BACKSIDE, AND THE PROCESS METHOD OF THEREOF
摘要 <p>A blank mask and a photomask which have a deposition layer on backside, and a process method of thereof are provided to improve the resolution and the pattern uniformity of the subject by improving the exposure quantity distribution of scanner or the stepper exposure apparatus. The exposure quantity distribution of the stepper exposure apparatus and the scanner is confirmed. The pattern drafting is performed by deciding on the transmittance of a deposition layer(2) on backside, and the type and the distribution of pattern. A photomask is manufactured by using a blank-mask. A light-shielding layer(4) and an anti-reflective layer(5) are laminated on the front side of a transparent substrate(1). The deposition layer on backside is laminated on the backplane of the transparent substrate. Photoresist is coated on the anti-reflective layer. The light-shielding layer is formed of chrome(Cr) and chrome compound.</p>
申请公布号 KR20090032802(A) 申请公布日期 2009.04.01
申请号 KR20070098305 申请日期 2007.09.28
申请人 S&STECH CO., LTD. 发明人 NAM, KEE SOO;CHA, HAN SUN;KANG, HYOUNG JONG;RYU, GI HUN;KIM, SE WOON
分类号 H01L21/027 主分类号 H01L21/027
代理机构 代理人
主权项
地址