| 摘要 |
<p>A photo mask, a method for manufacturing the photo mask and a method for manufacturing a semiconductor device using the same are provided to control the direction of the polarized light used as the light source of exposure by using the phase delay layer in which the thickness is different. A reflecting layer(310) and a phase delay layer(320) of multi-layered are formed on the top of a reflector plate(300). A buffer layer(330) and an absorbing layer(340) exposing the first region are formed on the top of the phase delay layer. A photosensitive pattern(350) exposing the second region is formed on upper region including the buffer layer and the absorbing layer. The second region having the phase delay layer thinner than the first region is formed by etching the buffer layer, the absorbing layer, and a part of the phase delay layer.</p> |
