| 摘要 |
A film resistor is provided to control validity of an ion scavenger by a temperature-dependent ion scavenger or a switch spot. A platinum-resistance film pattern is deposited on a metal oxide substrate(1). A ceramic intermediate layer(7) is formed on the platinum-resistance film pattern. A self-supporting lid is contacted on a full surface of the ceramic intermediate layer. A glass-ceramic(10) is formed on the full surface of the ceramic intermediate layer, and has an electrical conductive property or an ion conductive property over 750°C. The self-supporting lid is contacted with a metal-doped glass ceramic. An electric insulation interlayer is coated by the glass ceramic or the metal-doped glass ceramic.
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