| 摘要 |
<p>A resist composition and a pattern-forming method using the same are provided to ensure high sensitivity, high resolution and good LWR and to reduce swing due to the change of standing wave at the highly reflection substrate, form and resist film thickness by the KrF ion implantation. A resist composition comprises: (A) a resin comprising a repeating unit capable of decomposing by the action of an acid to increase solubility in an alkali developing solution and represented by the following formula (I), and a repeating unit represented by the following formula (II); and (B) a compound capable of generating an acid upon irradiation with actinic ray or radiation, wherein A represents a hydrogen atom, an alkyl group, a hydroxyl group, an alkoxyl group, a halogen atom, a cyano group, a nitro group, an acyl group, an acyloxy group, a cycloalkyl group, an aryl group, a carboxyl group, an alkyloxycarbonyl group, an alkylcarbonyloxy group, or an aralkyl group; Ra represents a group containing a group capable of decomposing by the action of an acid; Rb represents an alkylene group, a cycloalkylene group, or a group of combining these groups; Y represents a heterocyclic group; and m represents 0 or 1.</p> |
