3-Level non-volatile semiconductor memory device and method of driving the same

摘要

A method of programming or reading a NAND memory storing three bits in a pair of cells, each cell having three possible states. Coding and decoding between ternary and binary representations is done by page buffer. The page buffer for a non-volatile semiconductor memory device includes a switch configured to couple a first bitline coupled to a first memory cell to a second bitline coupled to a second memory cell, a first latch block coupled to the first bitline and configured to transfer a first latch data to the first memory cell, and a second latch block coupled to the second bitline and the first latch block, and configured to transfer a second latch data to the second memory cell.