| 摘要 |
A formation method of a semiconductor device is provided to prevent the SAC(Self Align Contact) fail between a landing plug contact and a passing gate by forming a landing plug of the storage electrode and an isolation structure of the passing gate. An element isolation film(14) defining an active region(12) is formed in a semiconductor substrate. A photosensitive pattern defining the SEG(Selective Epitaxial Growth) reserved region of the active region through the exposure development process is formed. An Epitaxial layer(13) of the active region is formed by performing the SEG process. A gate recess region is formed by etching the gate recess reserved region of the growth layer of the active region. A gate electrode material layer(22), a gate conductive material layer(24), and a gate hard mask material layer(26) are successively laminated. A gate pattern(28) is formed by successively etching the gate electrode material layer, the gate conductive material layer, and the gate hard mask material layer. A gate spacer(30) is formed in the side wall of the gate pattern.
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