发明名称 Semiconductor circuit with positive temperature dependence resistor
摘要 A band gap reference circuit is configured by connecting an emitter of a transistor, having the base and the collector thereof grounded, to an internal circuit, and by connecting an emitter of another transistor, having the base and the collector thereof grounded, to the internal circuit via a resistor having a positive temperature dependence with respect to the absolute temperature, so as to ensure that a constant output current with a small temperature dependence can be generated, without providing any voltage-current conversion circuit and without generating a constant output voltage, while suppressing expansion in the circuit scale but based on a circuit configuration allowing lowering in the power source voltage.
申请公布号 US7511566(B2) 申请公布日期 2009.03.31
申请号 US20050168439 申请日期 2005.06.29
申请人 FUJITSU MICROELECTRONICS LIMITED 发明人 MATSUDA ATSUSHI
分类号 G05F1/10 主分类号 G05F1/10
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