| 摘要 |
A non-volatile semiconductor memory device is provided to improve the high field leakage current characteristic and low filed leakage current characteristic by optimally combining constituent layers of the insulating layer. A charge storage layer(103) is provided on the first insulating layer(102). The second insulating layer(107) is provided on the charge storage layer. The control gate electrode(108) is provided on the second insulating layer. The second insulating layer comprises the sub-layer(104) on the charge storage layer, and the intermediate layer(105) between the upper layer(106) and the sub-layer and the upper layer under the control gate electrode. |
