发明名称 |
Method of fabricating a nonvolatile memory device |
摘要 |
A method of fabricating a nonvolatile memory device includes forming a charge tunneling layer on a semiconductor substrate, forming a charge trapping layer on the charge tunneling layer, forming a first charge blocking layer on the charge trapping layer by supplying a metal source gas and a first oxidizing gas onto the charge trapping layer, forming a second charge blocking layer on the first charge blocking layer by supplying a metal source gas and a second oxidizing gas onto the first charge blocking layer, wherein the second oxidizing gas has a higher oxidizing power as compared to the first oxidizing gas, and forming a gate electrode layer on the second charge blocking layer.
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申请公布号 |
US7510931(B2) |
申请公布日期 |
2009.03.31 |
申请号 |
US20060605452 |
申请日期 |
2006.11.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK KI-YEON;CHOI HAN-MEI;LEE SEUNG-HWAN;KIM SUNG-TAE;KIM YOUNG-SUN |
分类号 |
H01L21/336;H01L21/4763;H01L21/8238 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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