| 摘要 |
A method of preventing etch profile bending and bowing in high aspect ratio openings by treating a polymer formed on the opening sidewalls are provided to prevent the bending of the etching profile by forming the highly conductive thin film at the side wall of each contact opening. The aperture is formed in the photoresist layer on the dielectric layer(102) and the location and diameter of the contact open hole(100) are limited. The substrate is arranged in the plasma reactor chamber. The fluorocarbon / flurorohydrocarbon gas, and the silicon fluoride gas and argon gas are injected inside the chamber. The polymer layer(100a) is evaporated on the side wall of the contact open hole. The contact open hole is etched to be matched to the aperture at the dielectric layer. The RF bias power of the nominally RF bias power level corresponding to the desired plasma-etching process is consecutively applied.
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