发明名称 NANOELECTRONIC AND MICROELECTRONIC CLEANING COMPOSITIONS
摘要 <p>NANOELECTRONIC AND MICROELECTRONIC CLEANING COMPOSITIONS Nanoelectronic and microelectronic cleaning compositions for cleaning nanoelectronic and microelectronic substrates under supercritical fluid state conditions, and particularly cleaning compositions useful with and having improved compatibility with nanoelectronic and microelectronic substrates characterized by silicon dioxide, sensitive low-K or high-K dielectrics and copper, tungsten, tantalum, nickel, gold, cobalt, palladium, platinum, chromium, ruthenium, rhodium, iridium, hafnium, titanium, molybdenum, tin and other metallization, as well as substrates of Al or AI(Cu) metallizations and advanced interconnect technologies, are provided by nanoelectronic and microelectronic cleaning compositions comprising nanoelectronic and microelectronic cleaning compositions of this invention are provided by compositions comprising: (1) a supercritical main fluid reaching a supercritical fluid state at a temperature of 250 degree C or less and a pressure of 600 bars or less (592.2 atm, 8702.3 psi), and (2) as a secondary fluid, a modifier formulation selected from the following formulations: a) a formulation comprising: an oxidizing agent; a polar organic solvent selected from the group consisting of amides, sulfones, sulfolenes, selenones and saturated alcohols; and optionally other components; b) a silicate free formulation comprising: a polar organic solvent selected from the group consisting of amides, sulfones, selenones and saturated alcohols; a strong alkaline base; and optionally other components; c) a formulation comprising: from about 0.05% to 30% by weight of one or more non-ammonium producing strong base containing non-nucleophilic, positively charged counter ions; from about 0.5 to about 99.95% by weight of one or more corrosion inhibiting solvent compounds, said corrosion inhibiting solvent compound having at least two sites capable of complexing with metals; and optionally other components; d) a formulation comprising: from about 0.05 to 20% by weight of one or more non-ammonium producing, non-HF producing fluoride salt; from about 5 to about 99.95% by weight of water, organic solvent or both water and organic solvent; and optionally other components; and e) a formulation comprising: from about 0.05% to 30% by weight of one or more non-ammonium producing strong base containing non- nucleophilic, positively charged counter ions; from about 5 to about 99.95% by weight of one or more steric hindered amide solvents; and optionally other components.</p>
申请公布号 SG150509(A1) 申请公布日期 2009.03.30
申请号 SG20090009788 申请日期 2005.02.11
申请人 MALLINCKRODT BAKER, INC. 发明人 HSU, CHIEN PIN SHERMAN
分类号 C11D3/39;C11D3/395;C11D7/22;C11D7/26;C11D7/32;C11D7/34;C11D7/50;C11D11/00;G03F7/42 主分类号 C11D3/39
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