发明名称 |
METHOD OF PREPARING A MASK FOR HIGH ENERGY PARTICLE BOMBARDMENT |
摘要 |
<p>METHOD OF PREPARING A MASK FOR HIGH ENERGY PARTICLE BOMBARDMENT A method of forming a mask for bombardment of a semiconductor substrate with high energy particles and a mask formed thereby are provided. A patterned layer of a blocking material is formed over a mask substrate to define a high energy particle bombardment mask pattern. The blocking material has sufficient thickness in the mask pattern to substantially shield the semiconductor substrate from selected high energy particles in areas overlapped by the mask pattern when the mask is aligned over the semiconductor substrate. The mask includes a mask substrate having a patterned layer of blocking material formed thereon to define a high energy particle bombardment mask pattern. The blocking material has sufficient thickness in the mask pattern to substantially shield the semiconductor substrate from selected high energy particles in areas of the semiconductor substrate overlapped by the mask pattern when the mask is aligned over the semiconductor substrate.</p> |
申请公布号 |
SG150373(A1) |
申请公布日期 |
2009.03.30 |
申请号 |
SG20030057775 |
申请日期 |
2003.09.26 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD |
发明人 |
WEN-CHIN LIN;TANG DENNY D.;YANG TSING- TYAN;JENG DAVID |
分类号 |
H01L21/266;(IPC1-7):H01L21/266 |
主分类号 |
H01L21/266 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|