| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetron sputtering film deposition system capable of performing the sputtering at low temperatures by shifting to a low-voltage side, a saturated zone of substrate current to be shifted to a high-voltage side when electron current is increased. SOLUTION: The magnetron sputtering film deposition system comprises an airtight treatment chamber 9, a first holding member 10 which is arranged in the treatment chamber 9 and supports a substrate 8, a second holding member 11 arranged in the treatment chamber 9, a target held by the second holding member 11, a center magnet 1 which is arranged on a center part on the back side of the target 7 with one magnetic pole thereof being directed to the back side of the target 7, a plurality of outer circumferential magnets 2 which are arranged on an outer circumferential edge on the back side of the target 7 with the other magnetic poles thereof being directed to the back side of the target, a coil 5, a high frequency power providing means 13 for providing the high frequency power to the coil 5, an anode member 20 arranged between the coil 5 and the substrate 8, an anode power providing means for providing the power to the anode member 20, and a power applying means 18 for applying the power between the target 7 and the substrate 8. COPYRIGHT: (C)2009,JPO&INPIT
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