发明名称 TOP PANEL STRUCTURE, AND PLASMA PROCESSING APPARATUS USING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a top panel structure that can ensure enhanced strength of a top panel itself and improved durability against an increased temperature and that can supply a large amount of gas by increasing the gas supply pressure. <P>SOLUTION: In a top panel structure having a top panel body 74 provided at an opening on a ceiling of a processing vessel 34 for plasma processing apparatus in which vacuuming can be performed at the inside, the top panel body is integrally provided with a plurality of gas flow paths 102 formed along the planar direction of the top panel body and gas injection holes 104 that are communicated with the gas flow paths and are open toward the plane side of the top panel body, facing the inside of the processing vessel, thereby improving durability against an increased temperature and supplying a large amount of gas by increasing the gas supply pressure. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009064988(A) 申请公布日期 2009.03.26
申请号 JP20070232099 申请日期 2007.09.06
申请人 TOKYO ELECTRON LTD;TOHOKU UNIV;HOKURIKU SEIKEI KOGYO KK 发明人 ISHIBASHI KIYOTAKA;OMI TADAHIRO;GOTO TETSUYA;OKESA MASAHIRO
分类号 H01L21/205;C23C16/455;C23C16/511;H01L21/3065 主分类号 H01L21/205
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