MAGNETIC RANDOM ACCESS MEMORY, ITS WRITING METHOD, AND MAGNETORESISTIVE EFFECT ELEMENT

摘要

A magnetic random access memory comprises a first ferromagnetic layer (10), an insulating layer (20) provided adjacent to the first ferromagnetic layer (10), a first fixed magnetization layer (30) provided adjacent to the insulating layer (20) and opposite to the first ferromagnetic layer (10). The first ferromagnetic layer (10) includes a free magnetization region (12), a first fixed magnetization region (11a), and a second fixed magnetization region (11b). The free magnetization region (12) has reversible magnetization and overlaps with the second ferromagnetic layer (20).The first fixed magnetization region (11a) has first fixed magnetization and is connected to part of the free magnetization region. The second fixed magnetization region (11b) has second fixed magnetization and is connected to part of the free magnetization region (12). The first ferromagnetic layer (10) has magnetic anisotropy in a direction perpendicular to the film surface. The first fixed magnetization and the second fixed magnetization are fixed antiparallel to each other in the direction perpendicular to the film surface.